紅外濾光片

紅外窄帶濾光片采用多膜系結構，通過精密鍍膜工藝制備的只允許特定波長、特定帶寬的光線透過的濾光片，主要用于紅外氣體檢測、熒光分析等領域。

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精密鍍膜工藝制備

紅外窄帶濾光片采用多膜系結構，通過精密鍍膜工藝制備

保證特定氣種的檢測精度

多膜系結構，保證特定帶寬、波長光線通過，保證特定氣種的檢測精度
       

       
p1

Specifications

Description
5020NBP-240
Center Wavelength
5020±40nm
Half-peak Width
240±20nm
Peak transmittance
≥85%
Blocking
1500-11000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
p2

Specifications

Description
4480BPF-620
Center Wavelength
4480±70nm
Half-peak Width
620±60nm
Peak transmittance
≥85%
Blocking
1500-11000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
P3

Specifications

Description
3900NBP-138
Center Wavelength
3900±50nm
Half-peak Width
138±15nm
Peak transmittance
≥85%
Blocking
1500-11000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
P4

Specifications

Description
4260NBP-180
Center Wavelength
4260±40nm
Half-peak Width
180±20nm
Peak transmittance
≥85%
Blocking
1500-11000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
P5

Specifications

Description
3400NBP-180
Center Wavelength
3400±50nm
Half-peak Width
180±20nm
Peak transmittance
≥85%
Blocking
1500-11000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
P6

Specifications

Description
10600NBP-240
Center Wavelength
10600±100nm
Half-peak Width
240±50nm
Peak transmittance
≥70%
Blocking
2000-18000nm
Substrate
CZ-Si
Thickness
0.5mm
Size
100±0.2mm dia
Clear Aperture
98mm dia
Coating Method
Electron Beam
Depostion
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發明專利證書